Semiconductor manufacturer Nexperia recently announced plans to invest $200 million (approximately 184 million euros) in the development of next-generation wide bandgap semiconductor products (WBGs), such as silicon carbide (SiC) and gallium nitride (GaN), and establish production infrastructure at its Hamburg factory. Meanwhile, the production capacity of silicon (Si) diodes and transistors in wafer factories will increase.
It is reported that in order to meet the growing long-term demand for high-efficiency power semiconductors, Ansei Semiconductor will start researching and producing SiC, GaN, and Si technologies in Germany from June 2024.
The first high-voltage D-Mode GaN transistor and SiC diode production line was put into use in June 2024. The next milestone will be the establishment of a 200mm SiC MOSFET and low-voltage GaN HEMT production line. These production lines will be completed at the Hamburg factory in the next two years. Meanwhile, this investment will also help further automate the existing infrastructure of the Hamburg factory and expand silicon production capacity by gradually shifting towards using 200mm wafers.
Ansei Semiconductor pointed out that this measure fully demonstrates its strong support for key technologies in the fields of electrification and digitization. "SiC and GaN semiconductors enable high-power applications such as data centers to operate with excellent efficiency, and are also core components of renewable energy applications and electric vehicles. These wide bandgap technologies have enormous potential and are becoming increasingly important for achieving decarbonization goals."
It is worth noting that this investment is another important milestone in the century long history of Ansch Semiconductor's Lockstadt factory in Hamburg. It is reported that since the establishment of Valvo Radio ö hrenfabrik in 1924, the factory has continuously developed and now supports about a quarter of the global demand for small signal diodes and transistors.